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Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Doolittle, W. Alan; Committee Member: Ferguson, Ian; Committee Member: Graham, Samuel; Committee Member: Rohatgi, Ajeet; Committee Member: Shen, Shyh-Chiang.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/456209369
Date January 2009
CreatorsTrybus, Elaissa Lee.
PublisherAtlanta, Ga. : Georgia Institute of Technology,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceAvailable online, Georgia Institute of Technology:

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