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Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories

Ferroelectricity is very attractive for nonvolatile memories since it allows non-volatility paired with a field driven switching mechanism enabling a very low-power write operation. Non-volatile memories based on ferroelectric lead-zirconium-titanate (PZT) (see fig. la) are available on the market for more than a quarter of a century now [1]. Yet they are limited to niche applications due to the compatibility issues of the ferroelectric material with CMOS processes and the associated limited scalability [2]. The discovery of ferroelectricity in doped hafnium oxide has revived the activities towards a variety of scalable ferroelectric nonvolatile memory devices

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:77577
Date26 January 2022
CreatorsMikolajick, T., Mulaosmanovic, H., Hoffmann, M., Max, B., Mittmann, T., Schroeder, U., Slesazeck, S.
PublisherIEEE
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation978-1-72812-112-3, 10.1109/DRC46940.2019.9046455

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