Novel Quantum Dot Based Memories with Many Days of Storage Time: Last Steps towards the Holy Grail?

Description

The feasibility of the QD-Flash concept, its fast write and erase times, is demonstrated together with storage times of 4 days at room temperature. The storage time of holes in (InGa)Sb QDs embedded in a (AlGa)P matrix can be extended by growth modifications to 10 y. Tunneling structures were recently demonstrated to solve the trade-off conflict between storage time and erase time. A QD-NVSRAM is suggested to become the first commercial application.

Links & Downloads

1. urn:nbn:de:bsz:14-qucosa2-769519
2. https://tud.qucosa.de/id/qucosa%3A76951
3. https://tud.qucosa.de/api/qucosa%3A76951/attachment/ATT-0/

Tags

quantum dots, QD-flash, tunneling, NVSRA

info:eu-repo/classification/ddc/621.3

ddc:621.3

Additional Fields

Identifer	oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76951
Date	10 December 2021
Creators	Bimberg, D., Mikolajick, T., Wallart, X.
Publisher	IEEE
Source Sets	Hochschulschriftenserver (HSSS) der SLUB Dresden
Language	English
Detected Language	English
Type	info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rights	info:eu-repo/semantics/openAccess
Relation	978-1-7281-4431-3, 10.1109/NVMTS47818.2019.8986178