Main goal of this thesis is evaluation of the available SON and sacrificial layer technologies from the perspective of temperature sensor design. Based on the findings, a series of detector architectures is proposed. The work is subdivided into two major parts, with the first one targeting the process characterization. Good command of the selected technology, awareness of its dependencies and limitations, is essential and has to be examined prior to any MEMS design. Pressure related topics are of particular interest, since this criterion, among others, highly influences the performance of thermal systems. Knowledge of the critical parameters is applied in the second half, where the actual IR sensor design is considered. Process characterization, required for thermal insulation estimations, is not the only link between the two physics fields. Discussed IR detectors are highly inspired by the developed pressure sensing solutions. This resulted in either similar operation principles being applied, or even the same fabricated structures being adapted for new use.:List of abbreviations
List of Figures
List of Tables
Acknowledgements
1 Introduction
1.1 Motivation and organization of the work
1.2 Microstructure fabrication methods
1.2.1 Surface micromachining
1.2.2 Bulk micromachining
1.2.3 SOI and SON structuring
2 Pressure sensor for process characterization applications
2.1 Motivation
2.2 Pirani gauge approach
2.2.1 Principles of operation and state of the art
2.2.2 Modelling
2.2.2.1 Setup
2.2.2.2 Results
2.2.3 Processing
2.2.4 Measurement
2.2.4.1 Setup
2.2.4.2 Results
2.2.5 Application
2.2.5.1 Outgassing characterization
2.2.5.2 Reliability investigation
2.2.5.3 Thermal emitter for IR spectroscopy
2.2.5.4 Active pressure sensor
2.3 Capacitive sensor approach
2.3.1 Principles of operation and state of the art
2.3.2 Surface channel approach
2.3.3 SON channel approach
2.3.4 Application
2.3.4.1 MEMS dynamic characterization
2.3.4.2 Differential capacitive pressure sensor
2.4 Summary and overview of results
3 Temperature sensor for IR applications
3.1 Motivation
3.2 Resistive sensor approach
3.2.1 Principles of operation
3.2.2 Modelling
3.2.3 Measurement
3.3 Capacitive sensor approach
3.3.1 Principles of operation
3.3.2 Modelling
3.3.2.1 Setup
3.3.2.2 Results
3.3.3 Processing
3.4 Junction - based approach
3.4.1 State of the art
3.4.2 Thermal insulation design
3.4.2.1 Overview
3.4.2.2 Processing
3.4.2.3 Thermal performance
3.4.3 Detector design
3.4.3.1 Diode sensing solution
3.4.3.2 Bipolar Junction Transistor sensing solution
3.4.3.3 Junction Field Effect Transistor sensing solution
3.5 Summary and overview of results
4 Conclusion
Bibliography
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:77484 |
| Date | 20 January 2022 |
| Creators | Kravchenko, Andrey |
| Contributors | Fischer, Wolf-Joachim, Mehner, Jan, Technische Universität Dresden, Infineon Technologies Dresden GmbH & Co. KG |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
Page generated in 0.0022 seconds