This master's thesis deals with study of the injected charge contrast mechanism of doped semiconductors by using the ultra – high vacuum scanning low electron energy microscope (UHV SLEEM). The aims of this work were to explain the injected charge contrast mechanism, to ability of this contrast mechanism to map the dopant density quantitatively and to identify the influencing factors.
Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:228856 |
Date | January 2009 |
Creators | Mikmeková, Šárka |
Contributors | Müllerová, Ilona, Pavloušková, Zina |
Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
Source Sets | Czech ETDs |
Language | Czech |
Detected Language | English |
Type | info:eu-repo/semantics/masterThesis |
Rights | info:eu-repo/semantics/restrictedAccess |
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