Among nitide sremiconductor, InN has the highest electron drift velocity and the smallest effective mass. InN has also been proven to be a narrow band gap semiconductor with a band gap energy of about 0.6-0.7 eV at room temperature.
During the past few years, InN has attracted extensive attention due to is potential applications in semiconductor devices such as light-emitting diodes, lasers, and high efficiency solar cells. With the improvement of growth techniques in recently years, high quality InN films grown by plasma-assisted molecular-beam epitaxy (PAMBE) are now readily available. But there is no explicit knowledge for the physical properties of InN. In our experiment, we grow a serious of Si-doped InN with carrier concentration from 1.15 ¡Ñ 1018 cm-3 to 1.90¡Ñ1019 cm-3 by PAMBE . In this thesis we will introduce the instrument and describe the characteristics of Si-doped InN by photoluminescence, high-resolution x-ray diffraction, Raman spectroscopy, Scanning Electron Microscopy and cathodoluminescence
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0828108-213757 |
| Date | 28 August 2008 |
| Creators | Chang, Yu-lin |
| Contributors | Min-Hsiung Tsai, Li-Wei Tu, Der-Jun Jang, Quark Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828108-213757 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0017 seconds