This dissertation presents the radiation-induced charge trapping studies of upcoming material systems of Si and SiC for future low power and high power technologies. HfO2/Si with metal gates has already been announced as the material system that will power the future technology scaling for low power devices. SiO2/SiC based devices are possible candidates for the upcoming high power device technologies. This dissertation provides significant insights into the charge trapping characteristics in these devices exposed to high-energy ionizing radiation. Charge trapping is studied as a function of dose, processing and gate oxide fields with extensive materials characterization performed before irradiations. The results provide additional information for establishing reliable design rules for future MOS devices intended for both, high and low operating voltage when exposed to a radiation environment.
| Identifer | oai:union.ndltd.org:VANDERBILT/oai:VANDERBILTETD:etd-03312008-170923 |
| Date | 28 April 2008 |
| Creators | Dixit, Sriram Kannan |
| Contributors | Leonard C. Feldman, Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf, Norman H. Tolk, Greg Walker |
| Publisher | VANDERBILT |
| Source Sets | Vanderbilt University Theses |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.library.vanderbilt.edu/available/etd-03312008-170923/ |
| Rights | unrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Vanderbilt University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
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