Gallium Nitride or GaN-based high electron mobility transistors (HEMTs) is currently the most promising device technology in several key military and civilian applications due to excellent high-power as well as high-frequency performance. Even though the performance figures are outstanding, GaN-based HEMTs are not as mature as some competing technologies, which means that establishing the reliability of the technology is important to enable use in critical applications. The objective of this research is to understand the physical mechanisms affecting the reliability of GaN HEMTs at moderate drain biases (typically Vds < 30 V in the devices considered here). The degradation in device performance is believed to be due to the formation or modification of charged defects near the interface by hydrogen depassivation processes (due to electron-activated hydrogen removal) from energetic carriers. A rate-equation describing the defect generation process is formulated based on this assumption. A combination of ensemble Monte-Carlo (EMC) simulation statistics, ab-initio density functional theory (DFT) calculations, and accelerated stress experiments is used to relate the candidate defects to the overall degradation behavior (Vt and gm). The focus of this work is on the semi-ON mode of transistor operation in which the degradation is usually observed to be at its highest. This semi-ON state is reasonably close to the biasing region of class-AB high power amplifiers, which are popular because of the combination of high efficiency and low distortion that is associated with this configuration. The carrier-energy distributions are obtained using an EMC simulator that was developed specifically for III-V HFETs. The rate equation is used to model the degradation at different operating conditions as well as longer stress times from the result of one short duration stress test, by utilizing the carrier-energy distribution obtained from EMC simulations for one baseline condition. This work also attempts to identify the spatial location of these defects, and how this impacts the Vt shift and gm degradation of the devices.
| Identifer | oai:union.ndltd.org:VANDERBILT/oai:VANDERBILTETD:etd-11052015-010923 |
| Date | 06 November 2015 |
| Creators | Mukherjee, Shubhajit |
| Contributors | Ronald D. Schrimpf, Sokrates T. Pantelides, Daniel M. Fleetwood, Robert A. Reed, James E. Wittig |
| Publisher | VANDERBILT |
| Source Sets | Vanderbilt University Theses |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ |
| Rights | unrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Vanderbilt University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
Page generated in 0.0253 seconds