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Study of AlGaN/GaN quantum structure fabricated by Focus ion beam

We have observed a large spin-splitting in device made of AlxGa1-xN/GaN quantum wires. Based on this observation, we proposed a new spintronic application, the spin-hall quantum-ring interferometer, by the spin-Hall effect, Rashba and Dresselhaus effects. This device we use the ICP Etch System to etch the contact pattern, and then use the Multi-Target Sputter to deposit the protecting layer, and then use the E-Beam Evaporator to make the contact. Finally, using the Focus Ion Beam, we fabricate the quantum-ring and gate successfully. This thesis is focused on discussing the design of the fabrication and try to solve the problem in order to be able to detect the signal of the quantum-ring interferometer at low temperature and high magnetic condition.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0728109-020527
Date28 July 2009
CreatorsChang, Yung-Shi
ContributorsJih-Chen Chiang, Ikai Lo, mitch Chou
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527
Rightswithheld, Copyright information available at source archive

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