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Study on the Lead Magnesium Titanate Gate H+ Ion Sensitive Field Effect Transistors

In this thesis, the a-PMT (amorphous lead magnesium titanate) membranes have been prepared by sol-gel technique as H+ ion sensitive layers. The C-V measurements of the a-PMT/SiO2/Si EIS structures prepared by spin-on coating are used for examining the fabrication parameters and sensing properties. There exhibits the quasi-Nerstain response of 55¡V59 mV/pH in the range of pH 2¡V12, fabricated with the Mg-modified content of 4 mole%, the firing temperature of about 400 ¢J and the thickness of about 0.5

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0704101-231430
Date04 July 2001
CreatorsJan, Pei-Jane
ContributorsYing-Chung Chen, Jung-Chuan Chou, Man-Phon Houng, Nan-Chung Wu, Houng-Mo Duh
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-231430
Rightsunrestricted, Copyright information available at source archive

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