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A NO<sub>x</sub> sensor for high-temperature applications based on SiC

<p>A new NO<sub>x</sub> sensor for high-temperature applications has been developed and thouroghly characterised. The sensor layers are a mixed oxide of CoO, MgO and MgO<sub>2</sub> deposited by thermal evaporation with a porous platinum gate on top, deposited by thermal evaporation or sputtering. The sensitivity and selectivity of the sensor is promising and is shown to depend upon the ratio between Co and Mg in the film and a number of competing mechanisms are shown to take place on the sensor surface. Response and recovery of the device is still slow and there are some drift, which are suggested to be due to a restructuring sensor surface during operation that was found by SEM-studies. Finally,the oxide surface has been characterized by XPS and a novel process for deposition of the sensor layers by lift-off technique has been developed.</p>

Identiferoai:union.ndltd.org:UPSALLA/oai:DiVA.org:liu-59559
Date January 2010
CreatorsMidbjer, Johan
PublisherLinköping University, Applied Physics
Source SetsDiVA Archive at Upsalla University
LanguageEnglish
Detected LanguageEnglish
TypeStudent thesis, text

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