Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However, the complexity of ferroelectric perovskites has hindered the scaling of such devices to competitive feature sizes. The discovery of ferroelectricity in hafnium oxide solved this issue. Ferroelectric memories in three variants, capacitor based ferroelectric RAM, ferroelectric field effect transistors and ferroelectric tunneling junctions have become competitors for future memory solutions again. In this paper, the basics and current status of hafnium oxide based ferroelectric memory devices is described and recent results are shown.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:79686 |
| Date | 22 June 2022 |
| Creators | Mikolajick, T., Schroeder, U., Lomenzo, P. D., Breyer, E. T., Mulaosmanovic, H., Hoffmann, M., Mittmann, T., Mehmood, F., Max, B., Slesazeck, S. |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-7281-4032-2, 10.1109/IEDM19573.2019.8993447, info:eu-repo/grantAgreement/European Commission/Horizon 2020/780302//Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO |
Page generated in 0.0022 seconds