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Towards Full-area Passivating Contacts for Silicon Surfaces based on Al₂O₃-TiOₓ Double Layers

In order to remove the local openings for contacting PERC Solar cells, one has to introduce passivating contacts. The Al₂O₃-TiOₓ double layer stack is an attractive candidate for this purpose. This study will guide a way to enhance the conductivity of those contacts by doping TiO x with a. Additionally, it is shown, that major parts of the stacks are deposited by sputtering. This demonstrates a higher feasibility for industrial applications than atomic layer deposition as reported earlier [1], [2].

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76913
Date08 December 2021
CreatorsTröger, David, Grube, Matthias, Knaut, Martin, Reif, Johanna, Bartha, Johann W., Mikolajick, Thomas
PublisherIEEE
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation978-1-5386-8529-7, 10.1109/PVSC.2018.8547656

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