Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method /

Description

University, Diss--Erlangen-Nürnberg, 2008. / Parallelsachtt.: Entstehung und Eigenschaften von Versetzungen während der Gasphasenzüchtung von Silizium-Karbid Einkristallen.

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1. http://d-nb.info/989883353/04
2. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=016719063&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/550581909
Date	January 2008
Creators	Sakwe, Sakwe Aloysius.
Publisher	Aachen : Shaker,
Source Sets	OCLC
Language	English
Detected Language	German