The influence of depolarization and its role in causing data retention failure in ferroelectric memories is investigated. Ferroelectric Hf₀.₅Zr₀.₅O₂ thin films 8 nm thick incorporated into a metal-ferroelectric-metal capacitor are fabricated and characterized with varying thicknesses of an Al₂O₃ interfacial layer. The magnitude of the depolarization field is adjusted by controlling the thickness of the Al₂O₃ layer. The initial polarization and the change in polarization with electric field cycling is strongly impacted by the insertion of Al₂O₃ within the device stack. Transient polarization loss is shown to get worse with larger depolarization fields and data retention is evaluated up to 85 °C.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:77004 |
| Date | 17 December 2021 |
| Creators | Lomenzo, Patrick D., Slesazeck, Stefan, Hoffmann, Michael, Mikolajick, Thomas, Schroeder, Uwe, Max, Benjamin |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-72814-431-3, 10.1109/NVMTS47818.2019.9043368, info:eu-repo/grantAgreement/European Commission/Horizon 2020/692519//Ultra-Low PoweR technologIes and MEmory architectures for IoT/PRIME |
Page generated in 0.0016 seconds