The goal of this paper is to study the mechanism that may lead to the change of physic properties by annealed amorphous AZO samples, that were grown by RF magnetron sputtering, by an excimer laser or a tube furnace or both. By using of the Taguchi Methods, which is in expected to be a fast and efficiency method, to search the best process parameters and to understand what mechanism stood behind the change of these parameters.
We found that polycrystalline AZO films may be formed very easily when were grown at a temperature higher than 150K. Amorphous AZO films may grow successfully only at low growth temperature, ~77K. Annealing in tube furnace can alter the crystalline properties. Recrystalization starts at 325oC. Laser annealing will also recrystalize the amorphous AZO films with laser energy density higher than 160mj/cm2. Unfortunately, neither method provide enough improvement in the electric conductivity.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0825109-173441 |
| Date | 25 August 2009 |
| Creators | Chen, Bo-chun |
| Contributors | Ying-Chung Chen, Hsiung Chou, Shih-Jye Sun |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825109-173441 |
| Rights | campus_withheld, Copyright information available at source archive |
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