Origin of Ferroelectric Phase in Undoped HfO₂ Films Deposited by Sputtering

Description

This article corrects the following:

'Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering'
Advanced Materials Interfaces 6(11) 2019, first Published online: April 29, 2019

Links & Downloads

1. urn:nbn:de:bsz:14-qucosa2-805249
2. https://tud.qucosa.de/id/qucosa%3A80524
3. https://tud.qucosa.de/api/qucosa%3A80524/attachment/ATT-0/

Tags

info:eu-repo/classification/ddc/621.3

ddc:621.3

Additional Fields

Identifer	oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:80524
Date	30 August 2022
Creators	Mittmann, Terence, Materano, Monica, Lomenzo, Patrick D., Park, Min Hyuk, Stolichnov, Igor, Cavalieri, Matteo, Zhou, Chuanzhen, Chung, Ching-Chang, Jones, Jacob L., Szyjka, Thomas, Müller, Martina, Kersch, Alfred, Mikolajick, Thomas, Schroeder, Uwe
Publisher	Wiley-VCH
Source Sets	Hochschulschriftenserver (HSSS) der SLUB Dresden
Language	English
Detected Language	English
Type	info:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rights	info:eu-repo/semantics/openAccess
Relation	2199-160X, https://doi.org/10.1002/admi.201900042, urn:nbn:de:bsz:14-qucosa2-805203, qucosa:80520, info:eu-repo/grantAgreement/European Commission/H2020 | RIA/780302//Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO, info:eu-repo/grantAgreement/National Research Foundation South Korea/Basic Science Research Program/NRF-2018R1C1B5086580/