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Surface and structure characterizations of GaN grown on £^-LiAlO2 by PA-MBE

We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. First of all , we try to changed the growth ratio and concluded some relation between the quality of thin film. We expect to improve the quality of M-plane GaN and the size and density of c-plane GaN single-crystals by changing growth conditions. we found that when the N / Ga flow ratio decreased, that is much favor to the growth of M-plane GaN, is not favor to the growth of c-plane GaN.
Further research indicates that, on entering the PA-MBE growth prior to phosphoric acid ratio of 1:50 with water to etch the surface of LAO substrate for a minute, is more suitable for M-plane GaN growth, can effectively inhibit Growth of c-plane GaN.
The last series of samples, we will LAO substrate into PA-MBE system, DI water before soaking for ten minutes, we found the study can help to improve the c-plane GaN growth.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0121111-215031
Date21 January 2011
CreatorsWu, Hao-Fei
ContributorsJenn-Kai Tsai, Ikai Lo, Der-Jun Jang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031
Rightswithheld, Copyright information available at source archive

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