In this paper, we report on an increase in emission intensity of up to 10 nW/mm2 that has been realized with a new novel two
junction, diagonal avalanche control, and minority carrier injection silicon complementary metal–oxide–semiconductor
(CMOS) light emitting device (LED). The device utilizes a four-terminal configuration with two embedded shallow nþp
junctions in a p substrate. One junction is kept in deep-avalanche and light-emitting mode, while the other junction is forward
biased and minority carrier electrons are injected into the avalanching junction. The device has been realized using standard
0.35 mm CMOS design rules and fabrication technology and operates at 9V in the current range 0.1– 3 mA. The optical output
power is about one order of magnitude higher for previous single-junction nþp light-emitting devices while the emission
intensity is about two orders of magnitude higher than for single-junction devices. The optical output is about three orders of
magnitude higher than the low-frequency detectivity limit of silicon p–i–n detectors of comparable dimensions. The realized
characteristics may enable diverse optoelectronic applications in standard-CMOS-silicon-technology-based integrated
circuitry.
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:tut/oai:encore.tut.ac.za:d1000813 |
| Date | 18 April 2007 |
| Creators | Snyman, LW, Du Plessis, M, Aharoni, H |
| Publisher | Japanese Journal of Applied Physics |
| Source Sets | South African National ETD Portal |
| Language | English |
| Detected Language | English |
| Type | Text |
| Format | |
| Rights | 2007 The Japan Society of Applied Physics |
| Relation | ISI Science |
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