Abstract—A dependency of quantum efficiency of nn+pp+ silicon
complementary metal–oxide–semiconductor integrated lightemitting
devices on the current density through the active device
areas is demonstrated. It was observed that an increase in current
density from 1 6 10+2 to 2 2 10+4 A cm 2 through the active
regions of silicon n+pp+ light-emitting diodes results in an increase
in the external quantum efficiency from 1 6 10 7 to 5 8
10 6 (approximately two orders of magnitude). The light intensity
correspondingly increase from 10 6 to 10 1 W cm 2 mA (approximately
five orders of magnitude). In our study, the highest
efficiency device operate in the p-n junction reverse bias avalanche
mode and utilize current density increase by means of vertical and
lateral electrical field confinement at a wedge-shaped n+ tip placed
in a region of lower doping density and opposite highly conductive
p+ regions.
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:tut/oai:encore.tut.ac.za:d1001057 |
| Date | 10 October 2005 |
| Creators | Snyman, LW, Aharoni, H, du Plessis, M |
| Publisher | IEEE Photonics Technology Letters |
| Source Sets | South African National ETD Portal |
| Language | English |
| Detected Language | English |
| Type | Text |
| Format | |
| Rights | © 2005 IEEE |
| Relation | IEEE |
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