The radiation effects in III-V heterojunction devices are investigated in this
thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction
bipolar transistors (SHBTs) and GaN-based heterojunction light emitting
diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105
MeV) proton irradiation effects while GaN heterojunction LEDs are studied for
neutron irradiation effects. A compact model and the parameter extraction procedures
for HBTs are developed, and hence the I[subscript C]--V[subscript CE] characteristics of pre- and
post-irradiation HBTs can be simulated by employing the developed model.
HBTs are electrically characterized before and after proton irradiation. Overall,
the studied HBT devices are quite robust against high energy proton irradiation.
The most pronounced radiation effect shown in SHBTs is gain degradation. Displacement
damage in the bulk of base-emitter space-charge region, leading to excess
base current, is the responsible mechanism for the proton-induced gain degradation.
The performance degradation depends on the operating current and is generally less
at higher currents. Compared to the MBE grown devices, the MOVPE grown HBTs
show superior characteristics both in initial performance and in proton irradiation
hardness. The 67 MeV protons cause more damage than 105 MeV protons due to
their higher value of NIEL (non-ionizing energy loss). The HBT I-V characteristics
of pre- and post-irradiated samples can be simulated successfully by employing the
developed model.
GaN heterojunction LEDs are electrically and optically characterized before
and after neutron irradiation. Neutron irradiation causes changes in both the I-V
characteristic and the light output. Atomic displacement is responsible for both
electrical and optical degradation. Both electrical and optical properties degrade
steadily with neutron fluence producing severe degradation after the highest fluence
neutron irradiation. The light output degrades by more than 99% after 1.6x10����� n/cm�� neutron irradiation, and the radiation damage depends on the operating current and is generally less at higher currents. / Graduation date: 2003
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/31095 |
| Date | 21 November 2002 |
| Creators | Li, ChyiShiun |
| Contributors | Subramanian, S. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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