The objective of this dissertation is to generate high power ultrashort optical pulses from an all-semiconductor mode-locked laser system. The limitations of semiconductor optical amplifier in high energy, ultrashort pulse amplification are reviewed. A method to overcome the fundamental limit of small stored energy inside semiconductor optical amplifier called "eXtreme Chirped Pulse Amplification (X-CPA)" is proposed and studied theoretically and experimentally. The key benefits of the concept of X-CPA are addressed. Based on theoretical and experimental study, an all-semiconductor mode-locked X-CPA system consisting of a mode-locked master oscillator, an optical pulse pre-stretcher, a semiconductor optical amplifier (SOA) pulse picker, an extreme pulse stretcher/compressor, cascaded optical amplifiers, and a bulk grating compressor is successfully demonstrated and generates >kW record peak power. A potential candidate for generating high average power from an X-CPA system, novel grating coupled surface emitting semiconductor laser (GCSEL) devices, are studied experimentally. The first demonstration of mode-locking with GCSELs and associated amplification characteristics of grating coupled surface emitting SOAs will be presented. In an effort to go beyond the record setting results of the X-CPA system, a passive optical cavity amplification technique in conjunction with the X-CPA system is constructed, and studied experimentally and theoretically.
| Identifer | oai:union.ndltd.org:ucf.edu/oai:stars.library.ucf.edu:etd-1854 |
| Date | 01 January 2006 |
| Creators | Kim, Inwoong |
| Publisher | STARS |
| Source Sets | University of Central Florida |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Electronic Theses and Dissertations |
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