Ferroelectric field-effect transistors (FeFET) based on hafnium oxide offer great opportunities for Logic-in-Memory applications, due to their natural ability to combine logic (transistor) and memory (ferroelectric material), their low-power operation, and CMOS compatible integration. Besides aggressive scaling, dense integration of FeFETs is necessary to make electronic circuits more area-efficient. This paper investigates the impact of ultra-dense co-integration of a FeFET and an n-type selector FET, sharing the same active area, arranged in a 2TNOR memory array. The examined FeFETs exhibit a very similar switching behavior as FeFETs arranged in a standard AND-type array, indicating that the ultra-dense co-integration does not degrade the FeFET performance, and thus, paves the path to a very fine-grained, ultra-dense Logic-in-Memory implementation. Based on this densely integrated 2TNOR array we propose a very compact design of a 4-to-1 multiplexer with a build-in look-up table, thus directly merging logic and memory.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:79724 |
| Date | 23 June 2022 |
| Creators | Breyer, Evelyn T., Mulaosmanovic, Halid, Trommer, Jens, Melde, Thomas, Dünkel, Stefan, Trentzsch, Martin, Beyer, Sven, Mikolajick, Thomas, Slesazeck, Stefan |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-7281-1539-9, 10.1109/ESSDERC.2019.8901735, info:eu-repo/grantAgreement/Europäische Union/Horizon 2020 research and innovation program/780302//Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2/3eFERRO |
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