The aim of this project is to find the optimum growth conditions for growing amorphous Zn1-x-yAlxSny (x=0.02 and 0.2) films with various dopents and high transmittance in visible range. By varying substrate temperatures, working pressures, RF powers and growth modes, amorphous Zn1-x-yAlxSny films with high transmittance were successfully grown at low and room temperatures.
Grazing-incident small-angle X-ray diffraction data indicates that low temperature, high working pressure, low RF power and the short deposition period are the key for growing amorphous films in which adatoms on the surface of substrate do not have enough energy for migration and constructing a better crystal structure. As a result of this inadequate energy of adatoms, clusters of grains can be observed on the surface of films by the atomic force microscope. Amorphous Zn1-x-yAlxSny films possess crystalline short range order that opens up the optical and electronic bandgap. In terms of transmittance, a blue shift in the critical transmittance and a higher transmittance in IR range are observed. The high level doping of Al and Sn in ZnO films introduces crystal disordering in films and results in amorphous films even they were grown at room temperature. X-ray absorption near edge spectrum (XANES) discovers that the doped Sn behaves as tetra-valence ions for those Zn1-x-yAlxSny films with high oxygen deficiency. All amorphous films grown in this project exhibits a very low conductivity.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0830110-105440 |
| Date | 30 August 2010 |
| Creators | Haung, Wen-Hung |
| Contributors | Hsiung Chou, Ying-Chung Chen, Shih-Jye Sun, Jau-Wern Chiou |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0830110-105440 |
| Rights | withheld, Copyright information available at source archive |
Page generated in 0.002 seconds