The presented thesis focused on the study of a new material concept of Ce3+ doped multicom- ponent aluminum garnets (GdLu)3(GaAl)5O12. High purity single crystalline epitaxial films were grown by the method of liquid phase epitaxy from the BaO-B2O3-BaF2 flux with spe- cial emphasis on the elimination of the potential impurities coming from the flux. Combined experimental study of photoelectron yield (under alpha excitation), decay kinetics of fast and delayed recombination in the milisecond time range (under e-beam excitation) and photo-, cathodo- and radio-luminescence spectroscopies were used to characterize the studied mater- ial. The single-step nonradiative energy transfer from the donor Gd3+ to an acceptor Ce3+ was observed in the low Gd, Ce doped LuAG films and established as long-range dipole - dipole interaction. Special attention was devoted to the positive effect of combined Gd and Ga substitution on the extensive suppression of shallow traps, which are responsible for the slow component in the scintillation response. The best obtained scintillation characteristics of the studied epitaxial films were comparable with the top performance bulk crystals. 1
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:350128 |
| Date | January 2016 |
| Creators | Lučeničová, Zuzana |
| Contributors | Kučera, Miroslav, Bryknar, Zdeněk, Mihóková, Eva |
| Source Sets | Czech ETDs |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 0.0017 seconds