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Previous issue date: 2012-11-27 / The aim of this work is to develop and optimize processes for manufacturing of bifacial silicon solar cells with n+pp+ structure and by using 150 μm thick p-type Cz-Si and FZ-Si wafers. Local BSF was implemented by Al deposited by screen-printing and diffused in a belt furnace and surfaces were passivated by SiO2. Initially, the process for thinning the wafers was optimized and the average value of (146 ? 4) μm was obtained after texturing, obtaining an average reflectance of 11.2 %. The Al and Ag/Al pastes diffusion/firing was optimized as well as analyzed different approaches to passivate the surfaces with SiO2. It was observed that the best temperature for diffusion/firing was 840 ?C for cells without passivation oxide and 850 ?C for those with a SiO2 layer with a thickness of approximately 10 nm. The analysis of the minority-carrier lifetime showed that phosphorus diffusion produced gettering, but due to contamination in belt surface, minority-carrier lifetime decreased, reaching values similar to the initial. In order to improve the cell efficiency when it is illuminated by p face with local Al-BSF, boron (PBF20) was deposited on the rear face and two different orders of boron diffusion in the process were checked. For the process called α, in which the boron was diffused after phosphorus, the best efficiency obtained was 11.2% when the n+ face was illuminated and it was 8.3% when the cell was illuminated by the p+ side.
For the process called β, with boron diffusion performed before the phosphorus diffusion (producing a n+ region with sheet resistance of 43 Ω/□) and with antireflective coating (AR) on both sides, the efficiency achieved was 14% when the solar cell was illuminated by n+ face and it was of 10.4% when illuminated by p+ face. With the comparison of experimental results of the Cz-Si and FZ-Si cells, it was possible to conclude that, there is no advantage in using substrates higher life time of minority carriers considering the developed processes. / Este trabalho tem como objetivo desenvolver e otimizar processos para fabrica??o de c?lulas solares bifaciais com estrutura n+pp+ , espessura da ordem de 150 μm, em substratos de sil?cio Czochralski (Si-Cz), tipo p, com difus?o localizada de alum?nio realizada em forno de esteira, metaliza??o por serigrafia e passiva??o com SiO2. Para compara??o dos par?metros el?tricos, tamb?m foram utilizadas l?minas de sil?cio Float Zone (FZ). Inicialmente, foi otimizado o processo de afinamento da espessura alcan?ando o valor de (146 ? 4) μm, ap?s ocorreu a textura??o, resultando na reflet?ncia m?dia de 11,2 %. Foi realizado o processo de difus?o/queima das pastas de Al e Ag/Al bem como foram analisadas diferentes formas de passivar as superf?cies com SiO2. Observou-se que a melhor temperatura para a difus?o/queima foi de 840 ?C para c?lulas sem ?xido passivador e de 850 ?C para aquelas com uma camada de SiO2 com espessura da ordem de 10 nm. A an?lise do tempo de vida dos portadores minorit?rios mostrou que a difus?o de f?sforo produziu gettering, mas devido ? contamina??o no forno de esteira, o tempo de vida dos portadores minorit?rios no final do processo ficou pr?ximo ao valor inicial. Com o objetivo de aumentar a efici?ncia das c?lulas quando s?o iluminadas pela face p, com campo retrodifusor local de Al, foi depositado o dopante boro (PBF20) e testadas as diferentes ordens de difus?o do boro no processo. Para o processo denominado de α, no qual o boro foi difundido depois do f?sforo, a melhor c?lula solar obteve efici?ncia de 11,2 % quando iluminada pela face n+ e 8,3 % quando iluminada pela face p+.
Para o processo β, com a difus?o de boro antes da de f?sforo, com a regi?o n+ tendo resist?ncia de folha de 43 Ω/□ e com deposi??o de filme antirreflexo em ambas as faces, atingiu-se a efici?ncia de 14 % quando a c?lula solar foi iluminada pela face n+ e de 10,4 % quando iluminada pela face p+. Com a compara??o dos resultados experimentais das c?lulas de Si-Cz e Si-FZ pode-se concluir que n?o h? vantagem em usar substratos de maior tempo de vida dos portadores de carga minorit?rios inicial com os processos desenvolvidos.
| Identifer | oai:union.ndltd.org:IBICT/oai:tede2.pucrs.br:tede/3220 |
| Date | 27 November 2012 |
| Creators | Os?rio, Vanessa da Concei??o |
| Contributors | Moehlecke, Adriano |
| Publisher | Pontif?cia Universidade Cat?lica do Rio Grande do Sul, Programa de P?s-Gradua??o em Engenharia e Tecnologia de Materiais, PUCRS, BR, Faculdade de Engenharia |
| Source Sets | IBICT Brazilian ETDs |
| Language | Portuguese |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, info:eu-repo/semantics/doctoralThesis |
| Format | application/pdf |
| Source | reponame:Biblioteca Digital de Teses e Dissertações da PUC_RS, instname:Pontifícia Universidade Católica do Rio Grande do Sul, instacron:PUC_RS |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | -7432719344215120122, 500, 600, -655770572761439785 |
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