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<p>Process variations and increasing leakage current are major challenges toward
memory realization in deeply-scaled CMOS devices. Spintronic devices recently emerged
as one of the leading candidates for future information storage due to its potential
for non-volatility, high speed, low power and good endurance. In this thesis, we start
with the basic concepts and applications of three spintronic devices, namely spin or-
bit torque (SOT) based spin-valves, SOT-based magnetic tunnel junctions and the
magnetic skyrmion (MS) for both logic and machine learning hardware.
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<p>We propose a new Spin-Orbit Torque based Domino-style Spin Logic (SOT-DSL)
that operates in a sequence of Preset and Evaluation modes of operations. During
the preset mode, the output magnet is clocked to its hard-axis using spin Hall effect.
In the evaluation mode, the clocked output magnet is switched by a spin current from
the preceding stage. The nano-magnets in SOT-DSL are always driven by orthogonal spins rather than collinear spins, which in turn eliminates the incubation delay
and allows fast magnetization switching. Based on our simulation results, SOT-DSL
shows up to 50% improvement in energy consumption compared to All-Spin Logic.
Moreover, SOT-DSL relaxes the requirement for buffer insertion between long spin
channels, and significantly lowers the design complexity. This dissertation also covers
two applications using MS as information carriers. MS has been shown to possess
several advantages in terms of unprecedented stability, ultra-low depinning current
density, and compact size. </p><p><br></p><p>We propose a multi-bit MS cell with appropriate peripheral
circuits. A systematic device-circuit-architecture co-design is performed to evaluate
the feasibility of using MS-based memory as last-level caches for general purpose processors. To further establish the viability of skyrmions for other applications, a deep
spiking neural network (SNN) architecture where computation units are realized by
MS-based devices is also proposed. We develop device architectures and models suitable for neurons and synapses, provide device-to-system level analysis for the design
of an All-Spin Spiking Neural Network based on skyrmionic devices, and demonstrate
its efficiency over a corresponding CMOS implementation.</p>
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<p><br></p><p>Apart from the aforementioned applications such as memory storage elements or
logic operation, this research also focuses on the implementation of spin-based device
to solve combinatorial optimization problems. Finding an efficient computing method
to solve these problems has been researched extensively. The computational cost
for such optimization problems exponentially increases with the number of variables
using traditional von-Neumann architecture. Ising model, on the other hand, has
been proposed as a more suitable computation paradigm for its simple architecture
and inherent ability to efficiently solve combinatorial optimization problems. In this
work, SHE-MTJs are used as a stochastic switching bit to solve these problems based
on the Ising model. We also design an unique approach to map bi-prime factorization
problem to our proposed device-circuit configuration. By solving coupled Landau-
Lifshitz-Gilbert equations, we demonstrate that our coupling network can factorize
up to 16-bit binary numbers. </p>
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| Identifer | oai:union.ndltd.org:purdue.edu/oai:figshare.com:article/12268421 |
| Date | 08 May 2020 |
| Creators | Mei-Chin Chen (8811866) |
| Source Sets | Purdue University |
| Detected Language | English |
| Type | Text, Thesis |
| Rights | CC BY 4.0 |
| Relation | https://figshare.com/articles/SPINTRONIC_DEVICES_AND_ITS_APPLICATIONS/12268421 |
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