Over the past years, semiconductor quantum crystallite or micro-crystals of Si and Ge have received considerable attention for both fundamental and technological reasons. Quantum size effect and visible photoluminescence have been observed in nanometer-sized Si or Ge quantum crystallites. It has two practical applications. one is to prove to be optical semiconductor devices¡Fthe other is to turn into nano-crystal memories.
The material Ge is considered a promising material for optical device fabrication. It has been found that Ge quantum dots embedded in Si matrices exhibit photoluminescence (PL) originating from the spatially indirect no-phonon recombination between holes confined within the Ge dots and electrons from the conduction band of the Si. For nano-crystal memories employing discrete charge traps as storage elements have exhibited great potential in device performance, power consumption, and technology scalability, thus recently attracting much research attention as promising candidates to replace the conventional DRAM or Flash memories.
In the thesis, we will discuss the material properties of SiNGe and SiCNGe films, such as FTIR, AES, Raman Scattering spectrum analysis. The write/erase and retention characteristics of the nano-crystal are presented through current¡Vvoltage (I¡VV) and capacitance¡Vvoltage (C¡VV) measurements.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0711103-202122 |
| Date | 11 July 2003 |
| Creators | Wang, Min-Chuan |
| Contributors | Ting-Chang Chang, Dong-Po Wang, Tai-Fa Young, Po-Tsun Liu, Chin-Fu Liu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0711103-202122 |
| Rights | unrestricted, Copyright information available at source archive |
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