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Midgap states in gapped graphene induced by short-range impurities

Graphene is a recently created truly two-dimensional carbon material with promising
properties.
It is a prospective candidate for the next generation
of microelectronics. Current carriers in graphene have relativistic properties,
its lattice is very strong and yet flexible, granting graphene's
ballistic conductivity on the submicron scale at the room temperatures.

Midgap bound state induced by a single impurity in graphene does
not cause essential changes in the electronic liquid distribution
at all reasonable values of the coupling strength. Thus there
are no unusual screening effects predicted for the graphene with long-range
Coulomb impurity. This result holds in case of multiple impurities
localized in the finite area on the lattice. Exact expressions
for the lattice Green functions are derived.

The absence of critical screening for the short-range
impurities in graphene is a main result of the work. Another
outcome is the observation of the limitations on the Dirac
approximation applicability. / Micro-Electro-Mechanical Systems and Nanosystems

Identiferoai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:AEU.10048/1775
Date06 1900
CreatorsGrinek, Stepan
ContributorsChen, Jie (Electrical and Computing Engineering), Brett, Michael (Electrical and Computing Engineering), Zhang, Hao (Chemical and Materials Engineering)
Source SetsLibrary and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Format1265750 bytes, application/pdf
RelationGrinek, Stepan (2009), http://arxiv.org/abs/0912.1532

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