This thesis describes the development and demonstration of a new technique for the fabrication of well-defined quantum dots in a bulk silicon substrate, for potential applications such as quantum computation in coupled quantum dots. Hall characterisation was performed on double-gated mesaMetal-Oxide- Semiconductor Field-Effect Transistors (MOSFETs) on a silicon-on-insulator (SOI) substrate, for the purpose of silicon quantum dots in etched nanowires on SOI. Carrier density and mobility results are presented, demonstrating top- and backgate control over the two inversion layers created at the upper and lower surfaces of the superficial silicon mesa. A new technique is developed enabling effective depletion gating of quantum dots in a bulk silicon substrate. A lower layer of aluminium gates is defined using electron beam lithography; the surface of these gates is oxidised using a plasma oxidation technique; and a further layer of aluminium gates is deposited. The lower gates form tunable tunnel barriers in the narrow inversion layer channel created by the upper MOSFET gate. The two layers of gates are electrically isolated by the localised layer of aluminium oxide. Low-temperature transport spectroscopy has been performed in both the many electron (∼100 electrons) and the few electron (∼10 electrons) regimes.Excited states in the bias spectroscopy provide evidence of quantum confinement. Preliminary temperature and magnetic field dependence data are presented. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon. Furthermore, the demonstration of the first silicon radio-frequency single electron transistor is reported. The island is again defined by electrostatically tunable tunnel barriers in a narrow channel field effect transistor. Charge sensitivities of better than 10μe/√Hz are demonstrated at MHz bandwidth. These results establish that silicon may be used to fabricate fast, sensitive electrometers.
Identifer | oai:union.ndltd.org:ADTP/240709 |
Date | January 2008 |
Creators | Angus, Susan J., Electrical Engineering & Telecommunications, Faculty of Engineering, UNSW |
Source Sets | Australiasian Digital Theses Program |
Language | English |
Detected Language | English |
Rights | http://unsworks.unsw.edu.au/copyright, http://unsworks.unsw.edu.au/copyright |
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