Gate capacitance as a monitor for studying MOS transistor degradation by electrical stressing /

Description

Thesis (MEng)--University of South Australia, 1995

Links & Downloads

1. http://arrow.unisa.edu.au:8081/1959.8/84182
2. http://arrow.unisa.edu.au/vital/access/manager/Repository/unisa:42729

Tags

Metal oxide semiconductors.

Additional Fields

Identifer	oai:union.ndltd.org:ADTP/268746
Creators	Kiat, Ah Lian.
Source Sets	Australiasian Digital Theses Program
Language	English
Detected Language	English
Rights	copyright under review