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<p>In this study, VO2 films were grown on conducting oxide SrRuO3 layers. Apart from applications in magnetism, SrRuO3 is a widely studied template material to create multi-functional oxide heterostructures. Here, SrRuO3 buffered SrTiO3 (111) and Si/SiO2 were selected as platforms for VO2 growth. The properties of VO2 thin films grown on SrRuO3 buffer layers, as well as thermally and electric-field induced metal-insulator transition were systematically studied. Numerous growth experiments were conducted to identify the optimal growth conditions. Utilizing the current shunting associated with the conductive underlayer, electric-field induced metal-insulator transition was investigated in both the in-plane and out-of-plane configurations. A distributed resistance network with general applicability to understanding metal-insulator transitions is proposed to predict the electrical behavior of VO2 grown on conducting layers.</p>
| Identifer | oai:union.ndltd.org:purdue.edu/oai:figshare.com:article/20089796 |
| Date | 17 June 2022 |
| Creators | Chengyang Zhang (12889487) |
| Source Sets | Purdue University |
| Detected Language | English |
| Type | Text, Thesis |
| Rights | CC BY 4.0 |
| Relation | https://figshare.com/articles/thesis/Synthesis_and_Electrical_Behavior_of_VO2_Thin_Films_Grown_on_SrRuO3_Electrode_Layers/20089796 |
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