Copper has become the material of choice
for metallization of high-performance
ultra-large scale integrated circuits.
As the feature size is
continuously decreasing, metal-organic
chemical vapor deposition (MOCVD) appears
promising for depositing the Cu seed
layer required for electroplating, as well
as for filling entire interconnect structures.
In this work, four novel organophosphane
and organophosphite Cu(I) trifluoroacetates
were
studied as precursors for Cu MOCVD. Details
are reported on CVD results obtained with
Tris(tri-n-butylphosphane)copper(I)trifluoroacetate,
(<sup>n</sup>Bu<sub>3</sub>P)<sub>3</sub>CuO<sub>2</sub>CCF<sub>3</sub>.
Solutions of this
precursor with acetonitrile and isopropanol
were used for deposition experiments
on 100 mm Si wafers sputter-coated with Cu,
Cu/TiN, and Al(2 % Si)/W. Experiments
were carried out in a cold-wall reactor at
a pressure of 0.7 mbar, using a
liquid delivery approach for precursor dosage.
On Cu seed layers, continuous films were
obtained at low deposition rates (0.5 to
1 nm/min). At temperatures above 320°C,
hole formation in the Cu films was observed.
Deposition on TiN led to the formation of
single copper particles and etching of the
TiN, whereas isolating aluminum oxyfluoride
was formed after deposition on Al(Si)/W. It
is concluded that the formation of CF<sub>3</sub>
radicals during decarboxylation has a
negative effect on the deposition results.
Furthermore, the precursor chemistry needs
to be improved for a higher volatility of
the complex.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:18471 |
| Date | 16 March 2006 |
| Creators | Waechtler, Thomas, Shen, Yingzhong, Jakob, Alexander, Ecke, Ramona, Schulz, Stefan E., Wittenbecher, Lars, Sterzel, Hans-Josef, Tiefensee, Kristin, Oswald, Steffen, Schulze, Steffen, Lang, Heinrich, Hietschold, Michael, Gessner, Thomas |
| Publisher | Technische Universität Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:lecture, info:eu-repo/semantics/lecture, doc-type:Text |
| Source | Poster presentation; Materials for Advanced Metallization Conference (MAM 2006), 6 to 8 March 2006, Grenoble, France |
| Rights | info:eu-repo/semantics/openAccess |
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