Abstract
In this study, ZrN films were deposited on silicon wafer¡Bcopper and aluminum sheets by reactive sputtering of Zr target at room temperature in a mixed N2-Ar atmosphere with N2 gas flow rates of 5 and 6 sccm. Films of ZrN about 1£gm thick were annealed at various temperatures in order to study the grain growth and the inter-diffusion of atoms.
Electron probe X-ray microanalyzer¡]EPMA¡^ showed that the
as-deposited ZrN films were stoichiometric. The ring patterns of electron diffraction in transmission electron microscope (TEM) indicated that only ZrN was present without any Zr metal.
The grain size of ZrN showed no apparent change after annealing at 900¢J and 1000¢J, but showed that¡]200¡^ orientation is preferred to ¡]111¡^orientation. No Zr-Si compound were found at the ZrN/Si interface after annealing.
It was revealed that the ZrN grain size in the ZrN/Si interface was about 5¡ã15 nm, then broadened to columnar structure of 20¡ã50nm in diameter away from the interface.
The grain size of ZrN on Cu substrate was 3¡ã15 nm at the ZrN/Cu interface and leave away from the interface was 10¡ã80 nm. No Cu-Zr compound was found at the interface after annealing at 650¢J for 1 hour.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0716102-173542 |
| Date | 16 July 2002 |
| Creators | Wang, Yu-Min |
| Contributors | Bae-Heng Tseng, Der-Shin Gan, Pou-Yan Shen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716102-173542 |
| Rights | withheld, Copyright information available at source archive |
Page generated in 0.0023 seconds