<p>Au catalyst ZnO nanostructures have been grown on the a- and c-plane sapphire substrate by PLD. Influence of substrate lattice orientation, substrate surface and different substrate annealing temperature have been characterized by AFM, SEM and XRD. This report shows that a-plane sapphire substrate annealed at 1000 degree C and 1200 degree C improves the growth condition of Au catalyst ZnO nanostructures. For c-plane sapphire; annealing at 1200 degree C and 1400 degree C enhances the nanostructure growth. The better growth condition is a result of the terrace-and-step morphology seen on the substrate surface prior to growth. This report also indicates a correlation between the azimuthal in-plane alignment of the grown nanostructures and the sapphire substrate lattice orientation.</p>
| Identifer | oai:union.ndltd.org:UPSALLA/oai:DiVA.org:ntnu-9940 |
| Date | January 2009 |
| Creators | Skåre, Daniel Gundersen |
| Publisher | Norwegian University of Science and Technology, Department of Electronics and Telecommunications, Institutt for elektronikk og telekommunikasjon |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Student thesis, text |
Page generated in 0.0109 seconds