<p> The static electrical characteristics of dual-gate silicon n-channel insulated-gate field-effect trapsistors are investigated experimentally. A mathematical model based on theoretical expressions and containing twelve parameters adjusted for. best fit was developed. </p> <p> The mathematical model was used to calculate the low frequency conversion transconductance as a function of operating conditions. </p> / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/21420 |
| Date | 05 1900 |
| Creators | Zimmermann, Detlef |
| Contributors | Chisholm, S. H., Electrical Engineering |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
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