Slow light effect based rib silicon waveguide structures are studied in this paper to enhance modulation efficiency of an optoelectronic carrier plasma dispersion effect based phase modulator. Center frequency to achieve desired slow down factor and band width limitations of the structures are investigated through finite element method simulations. Optical modulation efficiency is modeled and the effects of doping, bias voltage and slow light on its performance are studied.
Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:35320 |
Date | 10 September 2019 |
Creators | Hosseini, Seyedreza, Jamshidi, Kambiz |
Publisher | SPIE |
Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
Language | English |
Detected Language | English |
Type | info:eu-repo/semantics/publishedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
Rights | info:eu-repo/semantics/openAccess |
Relation | 10.1117/12.2077160 |
Page generated in 0.0015 seconds