Gamma-phase lithium aluminate (LiAlO2) single crystal is
grown by Czochralski pulling method and a-plane LiAlO2(LAO) is
chosen as the substrate for subsequent gallium nitride (GaN)
epitaxial growth by plasma-assisted molecular beam epitaxy
(PAMBE). The lattice mismatch between the nitride and the
substrate is greatly reduced due to small lattice mismatch
of~0.3% between [0001]GaN and [010]LAO and of~1.7% between
[11-20]GaN and [001]LAO in the plane of the substrate LAO(100).
Pure hexagonal [10-10]GaN is successfully grown directly
on the LAO substrate without buffer layer. Crystal quality and
properties are analyzed through a series of measurements,
including reflection high-energy electron diffraction (RHEED),
field-emission electron microscopy (FESEM), electron backscatter
diffraction (EBSD), x-ray diffraction and cathodo
luminescence (CL).
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0717107-211625 |
| Date | 17 July 2007 |
| Creators | Huang, Huei-Min |
| Contributors | none, Prof. Li-Wei Tu, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717107-211625 |
| Rights | not_available, Copyright information available at source archive |
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