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Growth kinetics of GaN during molecular beam epitaxy

Thesis (Ph. D.)--University of Hong Kong, 2001. / Includes bibliographical references (leaves 95-100).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/49865285
Date January 2001
CreatorsZheng, Lianxi.
PublisherHong Kong : University of Hong Kong,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceView the Table of Contents & Abstract.

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