Defects in materials significantly influence their properties and enhance functionality. Hybrid functionals like HSE06, though effective for describing defects, face challenges in geometry optimization for large supercells. The r2SCAN+rVV10+U+Ud method provides a computationally efficient alternative. By selecting appropriate U and Ud values for the d orbitals of host and defect atoms, this method accurately describes defects in materials. Our study on small polaron defects in layered transition-metal oxides demonstrates this. Using literature values for U and Ud, we investigated birnessite (KnMnO2, n = 0.03) and KnNiO2, n = 0.03. With one K atom intercalated in a supercell, both materials show a localized eg polaronic state on the transition metal ion reduced by the K atom, when the geometry is calculated using published U values. The expected Jahn-Teller distortion is not observed when U=Ud=0. In layered cobalt oxide with additional potassium ions (KnCoO2, n = 1.03), a single extra K atom in the supercell leads to four localized electrons in the band gap, using standard U values, and even for U=Ud=0.
Monolayer MoS2 exhibits intriguing properties and potential technological applications when subjected to strain. A recent experimental study reported that the bandgap of monolayer MoS2 on a mildly curved graphite surface decreases by 400 meV/% strain under biaxial strain with a Poisson’s ratio of 0.44. We conducted density functional theory (DFT) calculations on a free-standing MoS2 monolayer using the generalized gradient approximation (GGA) PBE, the hybrid functional HSE06, and many-body perturbation theory with the GW approximation using PBE wavefunctions (G0W0@PBE). Our findings indicate that under biaxial strain with the experimental Poisson’s ratio, the bandgap decreases at rates of 63 meV/% strain (PBE), 73 meV/% strain (HSE06), and 43 meV/% strain (G0W0@PBE), which are significantly lower than the experimental rate. Additionally, PBE predicts a reduction rate of 90 meV/% strain for a Poisson’s ratio of 0.25. Spin-orbit correction (SOC) has minimal impact on the bandgap or its strain dependence. We also observed a semiconductor-to-metal transition at 10% tensile biaxial strain and a shift from a direct to an indirect bandgap, aligning with previous theoretical studies. / Physics
| Identifer | oai:union.ndltd.org:TEMPLE/oai:scholarshare.temple.edu:20.500.12613/10675 |
| Date | 08 1900 |
| Creators | Sah, Raj, 0000-0001-6833-4574 |
| Contributors | Wu, Xifan, Wu, Xifan, Zdilla, Michael J., 1978-, Perdew, John P., Ruzsinszky, Adrienn, Carnevale, Vincenzo |
| Publisher | Temple University. Libraries |
| Source Sets | Temple University |
| Language | English |
| Detected Language | English |
| Type | Thesis/Dissertation, Text |
| Format | 106 pages |
| Rights | IN COPYRIGHT- This Rights Statement can be used for an Item that is in copyright. Using this statement implies that the organization making this Item available has determined that the Item is in copyright and either is the rights-holder, has obtained permission from the rights-holder(s) to make their Work(s) available, or makes the Item available under an exception or limitation to copyright (including Fair Use) that entitles it to make the Item available., http://rightsstatements.org/vocab/InC/1.0/ |
| Relation | http://dx.doi.org/10.34944/dspace/10637, Theses and Dissertations |
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