Amorphous and crystalline silicon nanocomposites have been shown to act as effective “sensitizers” for erbium ions. In the present work, a series of erbium-doped (0.2 at.%) SiOx:Er films (x = 1 - 1.8) were synthesized by physical vapor deposition and subsequently annealed at temperatures ranging from 400°C to 1100°C to induce phase separation and cluster growth. Silicon nanocluster (Si-NC) and Er3+
photoluminescence intensity spectra and dynamics were investigated as a function of SiOx composition, annealing temperature, pump wavelength and power, and specimen temperature in order to determine characteristic cross-sections and to map the efficiency of the energy transfer process between Si-NCs and Er3+ ions. Additionally, two types of optical waveguides based on SiOx:Er materials were fabricated using conventional CMOS compatible microfabrication processes. Waveguide propagation losses as well as signal absorption and enhancement were investigated
under pumping conditions to evaluate the use of SiOx:Er materials as amplifying media. / Communications and Signal Processing
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:AEU.10048/466 |
| Date | 11 1900 |
| Creators | Lenz, Florian Christoph |
| Contributors | DeCorby, Raymond (Electrical and Computer Engineering), Meldrum, Al (Physics), McMullin, James (Electrical and Computer Engineering), Veinot, Jonathan (Chemistry) |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | 68103955 bytes, application/pdf |
| Relation | F. Lenz, R. DeCorby, and A. Meldrum, “Sensitization efficiencies in Er-doped SiOx films containing amorphous or crystalline silicon nanoclusters”, physica solidi (a), Vol. 206 (5), pp. 989-992, 2009. |
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