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Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy / A versatile approach towards semipolar GaN and the characterization of single nanocolumns

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1. http://hdl.handle.net/11858/00-1735-0000-0022-609E-3
2. urn:nbn:de:gbv:7-11858/00-1735-0000-0022-609E-3-3
3. 775113336

Identifer	oai:union.ndltd.org:uni-goettingen.de/oai:ediss.uni-goettingen.de:11858/00-1735-0000-0022-609E-3
Date	29 November 2013
Creators	Urban, Arne
Contributors	Rizzi, Angela Prof. Dr.
Source Sets	Georg-August-Universität Göttingen
Language	English
Detected Language	English
Type	doctoralThesis