We discuss the self-assembled Ni nanoparticles as the etching mask process and produce patterned sapphire substrate in this study. In the Ni nanoparticles formation process, we focus on two major factors which make the Ni films transform into Ni ball, (1)annealing temperature, (2) film thickness.
In the experiment, we deposit 2000Ǻ SiO2 on sapphire substrate, and use the E-gun to deposit 100~200Ǻ Ni film. After the Ni film deposition, we use the rapid thermal annealing at 900oC standing for 60sec, and make the Ni film transform into Ni spherical calotte which is resulting from the Ni film cohesive force. In the SiO2 etching process, we use CF4, 20sccm as reactive gas and the Ni calotte as etching mask to form SiO2 nanopillars. Then, we mixed Cl2 and SiCl4 reactive gas, 5sccm and 20sccm, and use SiO2 nanopillars as the etching mask in the dry etching process to form patterned sapphire substrate.
We obtain the optimum rapid thermal annealing for self-assembled Ni calotte at 100, 200Ǻ Ni film. We got the patterned sapphire substrate nanopillars at density of 1.59x109cm-2, average height ~64.3nm, average diameter ~106nm, and density of 6.20x108cm-2, average height ~160nm, average diameter ~193nm for 100, and 200Ǻ Ni film process condition, respectively. We use 160nm sapphire nanopillars to increase 18.0-10.3% scattering light for 350~450nm blue light LED application.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0727110-213357 |
| Date | 27 July 2010 |
| Creators | Chan, Min-Chao |
| Contributors | Chin-Ping Yu, Chien-Chung Lin, Yi-Jen Chiu, Tsong-Sheng Lay, Jian-Jang Huang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727110-213357 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0018 seconds