Silicon and silicon nitride thin films were growth on Si and glass substrates at room temperature by ratio-frequency (r-f) magnetron sputtering.
The electrical characteristics of the silicon nitride films were characterized using I-V and C-V measurement under different growth condition, including r-f power, nitrogen partial pressure, and hydrogen partial pressure. Minimum current leakages for MIS structure as low as 2¡Ñ10 A/cm were obtained at 1 MV/cm electrical field with hysteresis voltage about 2V. The root-mean square surface roughness of the silicon nitride film is less then 1nm. In addition, silicon nitride capacitors with indium-tin-oxide as electrodes were fabricated.
Silicon thin films prepared by R.F. magnetron sputtering at room temperature are amorphous. The measurements on the variation of the photo-conductivity were used to characterize the characteristics of the Si film.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706107-144911 |
| Date | 06 July 2007 |
| Creators | Yang, Chi-Chang |
| Contributors | Chao-Kuei Lee, Ju-Tah Tung, Ann-Kuo Chu, Ting-Chang Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706107-144911 |
| Rights | withheld, Copyright information available at source archive |
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