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The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane

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1. http://hdl.handle.net/1853/19991
2. 503427

Identifer	oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/19991
Date	12 1900
Creators	Chiang, Daniel Young
Publisher	Georgia Institute of Technology
Source Sets	Georgia Tech Electronic Thesis and Dissertation Archive
Detected Language	English
Type	Dissertation
Rights	Access restricted to authorized Georgia Tech users only.