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Resonant Gate Drive Techniques for Power MOSFETs

With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed. Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented. The presented circuit adds minor complexity to conventional gate drivers but reduces the MOSFET gate drive loss very effectively. To further expand its use in driving Half-Bridge MOSFETs, another circuit is proposed in this thesis. The later circuit simplifies the isolation circuitry for the top MOSFET and meanwhile consumes much lower power than conventional gate drivers. / Master of Science

Identiferoai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/10099
Date15 August 2000
CreatorsChen, Yuhui
ContributorsElectrical and Computer Engineering, Lee, Fred C., Borojević, Dušan, van Wyk, Dann
PublisherVirginia Tech
Source SetsVirginia Tech Theses and Dissertation
Detected LanguageEnglish
TypeThesis
FormatETD, application/pdf
RightsIn Copyright, http://rightsstatements.org/vocab/InC/1.0/
Relationfinal.pdf

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