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Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties

The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:21773
Date January 2002
CreatorsGebel, Thoralf
PublisherForschungszentrum Rossendorf
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:report, info:eu-repo/semantics/report, doc-type:Text
SourceWissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-350 Juli 2002
Rightsinfo:eu-repo/semantics/openAccess
Relationurn:nbn:de:bsz:d120-qucosa-237209, qucosa:22351

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