Recently, synthesis of Diamond-Like Carbon (DLC) films has received considerable interest. Owing to their similar characteristics of diamonds, such as extreme hardness, chemical stability, and high heat conductivity etc, DLC films are regarded as one of the most promising materials. But the practical applications have been limited due to their high internal stress and insufficient adhesion at the interface between DLC film and substrate. Several methods used to the deposition of Me-DLC films have been proposed. Studies have shown that the internal stress was released and the adhesion also improved by doping metallic element into DLC films. Conventionally, metal incorporation in DLC films were prepared by vapor deposition. The requirement of high vacuum equipment makes the process complicated. Besides, there are many merits in electrodeposition, such as low cost, simplicity of experimental set up, and availability for deposition on complex shapes substrate in large area. In this study, electrodepositing technique was used to synthesize the amorphous Cu-DLC films deposited on ITO substrate, in which the pH value of electrolyte varied, to study the characteristics and the composition of DLC films.
According to the I-t curves of deposition, the end of current density was used for the impedance comparison of films. With the addition of Cu, the resistance of the electron transportation in Cu-DLC was reduced, and the awl-shaped surface morphology was observed by AFM measurement, which could enhance the electron field emission properties of thin films. For Raman analysis, the effect of Cu addition would promote the sp2 bonding¡F this result corresponds with the increasing ID/IG value. It indicates that film becomes graphitization due to the addition of Cu and leads the shift of G-peak position toward lower wavenumber. ESCA spectra of C1s and
Cu2p indicate no obvious evidence of Cu-C formation. The sp2/(sp2+sp3) ratio increases with the pH value. In addition, we found that Cu-DLC in acidic environmental condition, or doping as [Cu(NH3)n]2+ complex is more conducive to the growth of copper metal in DLC films, and has the lowest optical band gap value deduced by n&k analyzer. Finally, we discussed the thin film growth mechanisms and the characteristic of electron field emission for the applications in the future.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726111-161645 |
| Date | 26 July 2011 |
| Creators | Tsai, Yun-Kuang |
| Contributors | none, Herng-Yih Ueng, Tzyy-Sheng Horng, Bing-Huai Huang, Zing-Way Pei |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726111-161645 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0016 seconds