In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the electrical properties of as-grown, as-implanted and annealed samples within the temperature range of 80-400 K. To investigate the annealing effect on both the absorption and photoluminescence (PL) spectra, absorption and PL measurements were performed at room temperature.
N-implantation reduced the resistivity order from 103 to 101 (& / #937 / -cm). We have used temperature dependent conductivity and Hall effect measurements to analyze the dominant scattering mechanisms. Hall measurements showed that all the samples had n-type conduction.
Absorption measurements showed that InSe had direct band gap. It was observed that annealing had almost no effect an both room temperature absorption and PL spectra of the samples.
| Identifer | oai:union.ndltd.org:METU/oai:etd.lib.metu.edu.tr:http://etd.lib.metu.edu.tr/upload/12605213/index.pdf |
| Date | 01 August 2004 |
| Creators | Deniz, Derya |
| Contributors | Akinoglu, Bulent Gultekin |
| Publisher | METU |
| Source Sets | Middle East Technical Univ. |
| Language | English |
| Detected Language | English |
| Type | M.S. Thesis |
| Format | text/pdf |
| Rights | To liberate the content for public access |
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