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Semiconductor Y-junction optical switches: principles, design and fabrication.

by Han Dejun. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves [117]-[129]). / Abstract --- p.ii / Acknowledgment --- p.iv / Table of Contents --- p.v / Chapter 1. --- Introduction --- p.1-1 / Chapter 1.1 --- The Current Situation of Space-division Optical Switches --- p.1-1 / Chapter 1.1.1 --- Digital Optical switches (DOS) --- p.1-2 / Chapter 1.1.2 --- Twin-guide amplifier (TGA) --- p.1-3 / Chapter 1.1.3 --- Direction coupler with amplifiers --- p.1-4 / Chapter 1.1.4 --- Total internal reflection type switch with amplifier --- p.1-5 / Chapter 1.1.5 --- Semiconductor optical amplifier gate switches --- p.1-6 / Chapter 1.2 --- Existing Problems --- p.1-9 / Chapter 1.3 --- New Proposals --- p.1-10 / Chapter 1.3.1 --- New features --- p.1-11 / Chapter 1.3.2 --- New technology for OEIC --- p.1-13 / Chapter 1.3.3 --- Expected improvement in performance --- p.1-14 / Chapter 1.4 --- Organization of thesis --- p.1-17 / Chapter 2. --- Band Lineup And Optical Gain Calculation --- p.2-1 / Chapter 2.1 --- Introduction --- p.2-1 / Chapter 2.2 --- Band Lineup for InGaAsP MQW Structures --- p.2-3 / Chapter 2.2.1 --- Derivation According to Ishikawa et al.'s Scheme --- p.2-3 / Chapter 2.2.2 --- Derivation According to Krijn's scheme --- p.2-5 / Chapter 2.2.3 --- Improved band lineup calculation scheme --- p.2-7 / Chapter 2.3 --- Gain and Spontaneous Emission Rate Expressions --- p.2-13 / Chapter 2.3.1 --- Optical gain expressions --- p.2-13 / Chapter 2.3.2 --- Spontaneous Emission Rate Expressions --- p.2-16 / Chapter 2.3.3 --- Polarization characteristics --- p.2-17 / Chapter 2.4 --- Optical Absorption and Its Polarization Sensitivity --- p.2-18 / Chapter 2.4.1 --- Absorption in an intermixed QW Structure --- p.2-18 / Chapter 2.4.2 --- Electro-optical Absorption --- p.2-19 / Chapter 3. --- Design of the Optical Switches --- p.3-1 / Chapter 3.1 --- Design of Material Layer Structure --- p.3-2 / Chapter 3.2 --- Design of Device Geometrical Structure --- p.3-7 / Chapter 3.3 --- Optical Gain in Polarization Insensitive Gain Medium-- An Example --- p.3-8 / Chapter 3.4 --- Optical Absorption in Polarization Insensitive Gain Medium-- An Example --- p.3-15 / Chapter 4. --- Fabrication Technology --- p.4-1 / Chapter 4.1 --- Passive Waveguide Formation --- p.4-2 / Chapter 4.1.1 --- Impurity-free vacancies diffusion technology --- p.4-3 / Chapter 4.1.2 --- High energy ion implantation enhanced intermixing technology --- p.4-4 / Chapter 4.1.3 --- Elevated temperature O+ HE-IIEI of MQWs --- p.4-6 / Chapter 4.2 --- Oxygen Implant Isolation --- p.4-6 / Chapter 4.3 --- Self Aligned Ridged Waveguide Technology --- p.4-7 / Chapter 4.4 --- Reduction of Effective Facet Reflectivity --- p.4-11 / Chapter 4.5 --- Fabrication Process Flow --- p.4-12 / Chapter 4.5.1 --- Layer structure of the material --- p.4-12 / Chapter 4.5.2 --- Fabrication process flow for the Y-junction optical switches --- p.4-14 / Chapter 4.6 --- Schematic Structure of the Fabricated Switches --- p.4-19 / Chapter 5. --- Experimental Results --- p.5-1 / Chapter 5.1 --- High Energy Ion Implantation Enhanced Intermixing of Quantum Wells --- p.5-2 / Chapter 5.1.1 --- High energy ion implantation --- p.5-2 / Chapter 5.1.2 --- Rapid thermal annealing --- p.5-4 / Chapter 5.2 --- Photoluminescence --- p.5-6 / Chapter 5.3 --- Electroluminescence --- p.5-9 / Chapter 5.4 --- Current-Voltage characteristics --- p.5-12 / Chapter 5.5 --- Guided-Wave Optoelectronic Measurement --- p.5-14 / Chapter 5.5.1 --- Setup of the measurement --- p.5-14 / Chapter 5.5.2 --- Measurement of absorption loss for the blue-shifted QW structure --- p.5-16 / Chapter 5.5.3 --- Optical losses measurement by Fabry-Perot interference method --- p.5-18 / Chapter 5.5.4 --- Electroabsorption peak shift in IIEI wafer --- p.5-21 / Chapter 5.6 --- Oxygen Implant Isolation --- p.5-21 / Chapter 5.7 --- Characteristics of Optical Switches --- p.5-23 / Chapter 5.7.1 --- Current-voltage characteristics --- p.5-23 / Chapter 5.7.2 --- Optical mode and transmission characteristics --- p.5-24 / Chapter 5.7.3 --- Switch characteristics --- p.5-29 / Chapter 5.7.4 --- Discussion --- p.5-32 / Chapter 6. --- Conclusion and Future Studies --- p.6-1 / Chapter 6.1 --- Conclusion --- p.6-1 / Chapter 6.1.1 --- The major contributions to the Y-JOS --- p.6-1 / Chapter 6.1.2 --- The major contribution to the bandgap engineering for InGaAs(p)/InP heterostructure --- p.6-3 / Chapter 6.1.3 --- The major contributions to the HE-IIEI technology --- p.6-4 / Chapter 6.2 --- Topics for Future Studies --- p.6-5 / Chapter 6.2.1 --- Band lineup and optical gain calculation --- p.6-5 / Chapter 6.2.2 --- Optimization of HE-IIEI technology --- p.6-6 / Chapter 6.2.3 --- Optimization of the Fabrication of Y-JOS --- p.6-7 / Reference --- p.R1 / Appendix A Characteristics Of Strained Quantum Wells --- p.A1 / Appendix B Effective Index Change Induced by Quantum Well Intermixing --- p.A3 / Appendix C Abbreviation --- p.A13 / Appendix D List of Publications --- p.A14

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_321648
Date January 1996
ContributorsHan, Dejun., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, vii, [144] leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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